FDD6606 MOSFET Transistor

The FDD6606 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD6606 transistor as follows.

FDD6606 Transistor Specification

Transistor Code		FDD6606
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	71W
Drain-Source Capacitance		577pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		3V

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