FDD6035AL MOSFET Transistor

The FDD6035AL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD6035AL transistor as follows.

FDD6035AL Transistor Specification

Transistor Code		FDD6035AL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	46A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	56W
Drain-Source Capacitance		325pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7nS

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