FDD5202P MOSFET Transistor

The FDD5202P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD5202P transistor as follows.

FDD5202P Transistor Specification

Transistor Code		FDD5202P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	39W
Drain-Source Capacitance		560pF
Operating Junction Temperature (Maximum)		150°C

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