FDD45AN06LA0 MOSFET Transistor

The FDD45AN06LA0 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD45AN06LA0 transistor as follows.

FDD45AN06LA0 Transistor Specification

Transistor Code		FDD45AN06LA0
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.036Ohm
Power Dissipation (Maximum)	PD	55W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		68nS
Gate-Threshold Voltage (Maximum)		3V

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