FDD306P MOSFET Transistor

The FDD306P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD306P transistor as follows.

FDD306P Transistor Specification

Transistor Code		FDD306P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	6.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	52W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		15nC

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