FDD26AN06A0 MOSFET Transistor

The FDD26AN06A0 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD26AN06A0 transistor as follows.

FDD26AN06A0 Transistor Specification

Transistor Code		FDD26AN06A0
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	36A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		155pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		72nS
Gate-Threshold Voltage (Maximum)		4V

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