FDD2512 MOSFET Transistor

The FDD2512 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD2512 transistor as follows.

FDD2512 Transistor Specification

Transistor Code		FDD2512
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.42Ohm
Power Dissipation (Maximum)	PD	42W
Drain-Source Capacitance		22pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		3.5nS
Gate-Threshold Voltage (Maximum)		4V

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