FDD1600N10ALZ MOSFET Transistor

The FDD1600N10ALZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD1600N10ALZ transistor as follows.

FDD1600N10ALZ Transistor Specification

Transistor Code		FDD1600N10ALZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	14.9W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2.8V

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