FDD068AN03L MOSFET Transistor

The FDD068AN03L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD068AN03L transistor as follows.

FDD068AN03L Transistor Specification

Transistor Code		FDD068AN03L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0057Ohm
Power Dissipation (Maximum)	PD	80W
Drain-Source Capacitance		490pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		171nS
Gate-Threshold Voltage (Maximum)		2.5V

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