FDC796N MOSFET Transistor

The FDC796N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC796N transistor as follows.

FDC796N Transistor Specification

Transistor Code		FDC796N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SSOT-6
Transistor SMD Code		..796
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		342pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.8nS
Gate-Threshold Voltage (Maximum)		3V

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