FDC699P_F077 MOSFET Transistor

The FDC699P_F077 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC699P_F077 transistor as follows.

FDC699P_F077 Transistor Specification

Transistor Code		FDC699P_F077
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SSOT-6
Transistor SMD Code		..699
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		560pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		1.5V

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