FDC699P MOSFET Transistor

The FDC699P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC699P transistor as follows.

FDC699P Transistor Specification

Transistor Code		FDC699P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SSOT-6
Transistor SMD Code		..699
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		560pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		1.5V

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