FDC6561AN MOSFET Transistor

The FDC6561AN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC6561AN transistor as follows.

FDC6561AN Transistor Specification

Transistor Code		FDC6561AN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SUPERSOT6
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.095Ohm
Power Dissipation (Maximum)	PD	0.9W
Operating Junction Temperature (Maximum)		150°C

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