FDC655BN MOSFET Transistor

The FDC655BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC655BN transistor as follows.

FDC655BN Transistor Specification

Transistor Code		FDC655BN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SSOT
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	1.6W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		9nC

UXPython is not the creator or an official representative of the FDC655BN MOSFET transistor. You can download the official FDC655BN MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FDC6321C MOSFET Transistor FDC602P MOSFET Transistor FDC6327C MOSFET Transistor FDN361BN MOSFET Transistor FDN5630 MOSFET Transistor SI3443DV MOSFET Transistor FDC642P_F085 MOSFET Transistor FDC5614P MOSFET Transistor FDN304PZ MOSFET Transistor FDN359BN MOSFET Transistor FDC6318P MOSFET Transistor FDC8602 MOSFET Transistor FDN306P MOSFET Transistor FDC6333C MOSFET Transistor FDC6310P MOSFET Transistor FDC637BNZ MOSFET Transistor FDC3612 MOSFET Transistor FDC6401N MOSFET Transistor FDC3512 MOSFET Transistor FDC6320C MOSFET Transistor