FDC6506P MOSFET Transistor

The FDC6506P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC6506P transistor as follows.

FDC6506P Transistor Specification

Transistor Code		FDC6506P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SUPERSOT6
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	1.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	0.9W
Operating Junction Temperature (Maximum)		150°C

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