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FDC645N MOSFET Transistor

The FDC645N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC645N transistor as follows.

Circuit diagram symbol of the FDC645N transistor

FDC645N Transistor Specification

Transistor Code FDC645N
Transistor Type MOSFET
Control Channel Type N-Channel
Package SSOT6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 5.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 1.6W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 2V

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