FDC640P_F095 MOSFET Transistor

The FDC640P_F095 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC640P_F095 transistor as follows.

FDC640P_F095 Transistor Specification

Transistor Code		FDC640P_F095
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SSOT-6
Transistor SMD Code		..604
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.053Ohm
Power Dissipation (Maximum)	PD	1.6W
Drain-Source Capacitance		244pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		1.5V

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