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FDC6392S MOSFET Transistor

The FDC6392S is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC6392S transistor as follows.

Circuit diagram symbol of the FDC6392S transistor

FDC6392S Transistor Specification

Transistor Code FDC6392S
Transistor Type MOSFET
Control Channel Type P-Channel
Package SSOT6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 2.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.15Ohm
Power Dissipation (Maximum) PD 0.96W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1.5V

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