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FDC6308P MOSFET Transistor

The FDC6308P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC6308P transistor as follows.

Circuit diagram symbol of the FDC6308P transistor

FDC6308P Transistor Specification

Transistor Code FDC6308P
Transistor Type MOSFET
Control Channel Type P-Channel
Package SUPERSOT6
Drain-Source Voltage (Maximum) VDS 20V
Drain Current (Maximum) ID 1.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.18Ohm
Power Dissipation (Maximum) PD 0.9W
Operating Junction Temperature (Maximum) 150°C

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