FDC6306P MOSFET Transistor

The FDC6306P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC6306P transistor as follows.

FDC6306P Transistor Specification

Transistor Code		FDC6306P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SUPERSOT6
Drain-Source Voltage (Maximum)	VDS	20V
Drain Current (Maximum)	ID	1.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	0.9W
Operating Junction Temperature (Maximum)		150°C

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