FDC6305N MOSFET Transistor

The FDC6305N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC6305N transistor as follows.

FDC6305N Transistor Specification

Transistor Code		FDC6305N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SUPERSOT6
Drain-Source Voltage (Maximum)	VDS	20V
Drain Current (Maximum)	ID	2.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	0.9W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		3.5nC

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