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FDC6304P MOSFET Transistor

The FDC6304P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC6304P transistor as follows.

Circuit diagram symbol of the FDC6304P transistor

FDC6304P Transistor Specification

Transistor Code FDC6304P
Transistor Type MOSFET
Control Channel Type P-Channel
Package SUPERSOT6
Drain-Source Voltage (Maximum) VDS 25V
Drain Current (Maximum) ID 0.46A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.1Ohm
Power Dissipation (Maximum) PD 0.9W
Operating Junction Temperature (Maximum) 150°C

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