FDC608PZ MOSFET Transistor

The FDC608PZ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC608PZ transistor as follows.

FDC608PZ Transistor Specification

Transistor Code		FDC608PZ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SSOT
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	1.6W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		17nC

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