FDC3512 MOSFET Transistor

The FDC3512 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC3512 transistor as follows.

FDC3512 Transistor Specification

Transistor Code		FDC3512
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SSOT
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.077Ohm
Power Dissipation (Maximum)	PD	1.6W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		13nC

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