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FDBL86363_F085 MOSFET Transistor

The FDBL86363_F085 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDBL86363_F085 transistor as follows.

Circuit diagram symbol of the FDBL86363_F085 transistor

FDBL86363_F085 Transistor Specification

Transistor Code FDBL86363_F085
Transistor Type MOSFET
Control Channel Type N-Channel
Package MO-299A
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 240A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.002Ohm
Power Dissipation (Maximum) PD 357W
Drain-Source Capacitance 1540pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 63nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 130nC

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