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FDBL0630N150 MOSFET Transistor

The FDBL0630N150 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDBL0630N150 transistor as follows.

Circuit diagram symbol of the FDBL0630N150 transistor

FDBL0630N150 Transistor Specification

Transistor Code FDBL0630N150
Transistor Type MOSFET
Control Channel Type N-Channel
Package H-PSOF
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 169A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.005Ohm
Power Dissipation (Maximum) PD 500W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 70nC

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