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FDBL0150N80 MOSFET Transistor

The FDBL0150N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDBL0150N80 transistor as follows.

FDBL0150N80 Transistor Specification

Transistor Code		FDBL0150N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MO-299A
Drain-Source Voltage (Maximum)	V_DS	80V
Gate-Source Voltage (Maximum)	V_GS	20V
Drain Current (Maximum)	I_D	300A
Drain-Source On-State Resistance (Maximum)	R_DS(on)	0.0014Ohm
Power Dissipation (Maximum)	P_D	429W
Drain-Source Capacitance		1925pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		73nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		172nC

FDBL0150N80 MOSFET Transistor Overview

The FDBL0150N80 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a MO-299A package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the FDBL0150N80 MOSFET

Followings are the key electrical characteristics of the FDBL0150N80 MOSFET transistor

Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in FDBL0150N80 MOSFET transistor is 80V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the FDBL0150N80 MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the FDBL0150N80 MOSFET transistor is 300A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of FDBL0150N80 MOSFET transistor when the transistor is fully turned on is 0.0014 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

Maximum Power Dissipation (P_D)

The maximum power that the FDBL0150N80 MOSFET transistor can comfortably transfer into heat without breaking is 429W. This indicates the amount of power that can safely be dissipated to the device as heat.

Drain-Source Capacitance

The capacitance between drain and source of the FDBL0150N80 MOSFET transistor is 1925pF. This value influences to the switching speed of the FDBL0150N80 MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

Rise Time

The time that the drain current or output voltage increases between low to high when the FDBL0150N80 MOSFET transistor is switched on is 73nS. This is the rate at which FDBL0150N80 MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the FDBL0150N80 MOSFET

Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of FDBL0150N80 MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the FDBL0150N80 MOSFET transistor. You can download the official FDBL0150N80 MOSFET transistor datasheet to get more infromation about this transistor.

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