FDBL0150N80 MOSFET Transistor

The FDBL0150N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDBL0150N80 transistor as follows.

FDBL0150N80 Transistor Specification

Transistor Code		FDBL0150N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MO-299A
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	300A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0014Ohm
Power Dissipation (Maximum)	PD	429W
Drain-Source Capacitance		1925pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		73nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		172nC

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