FDBL0110N60 MOSFET Transistor

The FDBL0110N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDBL0110N60 transistor as follows.

FDBL0110N60 Transistor Specification

Transistor Code		FDBL0110N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MO-299A
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	300A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0011Ohm
Power Dissipation (Maximum)	PD	429W
Drain-Source Capacitance		3375pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		61nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		170nC

UXPython is not the creator or an official representative of the FDBL0110N60 MOSFET transistor. You can download the official FDBL0110N60 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FDBL0330N80 MOSFET Transistor FDBL86563_F085 MOSFET Transistor FDBL0150N80 MOSFET Transistor FDBL0210N80 MOSFET Transistor FDBL86363_F085 MOSFET Transistor FDBL86366_F085 MOSFET Transistor FDBL0150N60 MOSFET Transistor FDBL86561_F085 MOSFET Transistor