FDBL0110N60 MOSFET Transistor

The FDBL0110N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDBL0110N60 transistor as follows.

FDBL0110N60 Transistor Specification

Transistor Code		FDBL0110N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MO-299A
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	300A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0011Ohm
Power Dissipation (Maximum)	PD	429W
Drain-Source Capacitance		3375pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		61nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		170nC

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