FDB8880 MOSFET Transistor

The FDB8880 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB8880 transistor as follows.

FDB8880 Transistor Specification

Transistor Code		FDB8880
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	54A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0116Ohm
Power Dissipation (Maximum)	PD	55W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		22nC

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