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FDB8878 MOSFET Transistor

The FDB8878 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB8878 transistor as follows.

Circuit diagram symbol of the FDB8878 transistor

FDB8878 Transistor Specification

Transistor Code FDB8878
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263AB
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 48A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.014Ohm
Power Dissipation (Maximum) PD 47.3W
Drain-Source Capacitance 188pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 244nS
Gate-Threshold Voltage (Maximum) 2.5V

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