FDB8876 MOSFET Transistor

The FDB8876 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB8876 transistor as follows.

FDB8876 Transistor Specification

Transistor Code		FDB8876
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	71A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		340pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		113nS
Gate-Threshold Voltage (Maximum)		2.5V

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