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FDB8160_F085 MOSFET Transistor

The FDB8160_F085 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB8160_F085 transistor as follows.

Circuit diagram symbol of the FDB8160_F085 transistor

FDB8160_F085 Transistor Specification

Transistor Code FDB8160_F085
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263_D2PAK
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0018Ohm
Power Dissipation (Maximum) PD 254W
Operating Junction Temperature (Maximum) 175°C
Total Gate Charge 187nC

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