FDB8160 MOSFET Transistor

The FDB8160 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB8160 transistor as follows.

FDB8160 Transistor Specification

Transistor Code		FDB8160
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0018Ohm
Power Dissipation (Maximum)	PD	254W
Drain-Source Capacitance		1810pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		18.9nS
Gate-Threshold Voltage (Maximum)		4V

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