FDB8132 MOSFET Transistor

The FDB8132 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB8132 transistor as follows.

FDB8132 Transistor Specification

Transistor Code		FDB8132
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0016Ohm
Power Dissipation (Maximum)	PD	341W
Drain-Source Capacitance		2135pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		29nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		209nC

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