FDB6035AL MOSFET Transistor

The FDB6035AL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB6035AL transistor as follows.

FDB6035AL Transistor Specification

Transistor Code		FDB6035AL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	48A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0125Ohm
Power Dissipation (Maximum)	PD	58W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		13nC

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