FDB6021P MOSFET Transistor

The FDB6021P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB6021P transistor as follows.

FDB6021P Transistor Specification

Transistor Code		FDB6021P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-263AB
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	28A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	37W
Drain-Source Capacitance		302pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1.5V

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