FDB52N20TM MOSFET Transistor

The FDB52N20TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB52N20TM transistor as follows.

FDB52N20TM Transistor Specification

Transistor Code		FDB52N20TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	52A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.049Ohm
Power Dissipation (Maximum)	PD	357W
Drain-Source Capacitance		540pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		175nS
Gate-Threshold Voltage (Maximum)		5V

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