FDB4020P MOSFET Transistor

The FDB4020P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB4020P transistor as follows.

FDB4020P Transistor Specification

Transistor Code		FDB4020P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	37.5W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		13nC

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