FDB38N30U MOSFET Transistor

The FDB38N30U is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB38N30U transistor as follows.

FDB38N30U Transistor Specification

Transistor Code		FDB38N30U
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	313W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V

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