FDB3860 MOSFET Transistor

The FDB3860 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB3860 transistor as follows.

FDB3860 Transistor Specification

Transistor Code		FDB3860
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.037Ohm
Power Dissipation (Maximum)	PD	71W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		30nC

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