FDB3672 MOSFET Transistor

The FDB3672 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB3672 transistor as follows.

FDB3672 Transistor Specification

Transistor Code		FDB3672
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	44A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		247pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		59nS
Gate-Threshold Voltage (Maximum)		4V

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