FDB33N25 MOSFET Transistor

The FDB33N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB33N25 transistor as follows.

FDB33N25 Transistor Specification

Transistor Code		FDB33N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.094Ohm
Power Dissipation (Maximum)	PD	235W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		36.8nC

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