FDB2570 MOSFET Transistor

The FDB2570 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB2570 transistor as follows.

FDB2570 Transistor Specification

Transistor Code		FDB2570
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	93W
Drain-Source Capacitance		106pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		4V

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