FDB20N50F MOSFET Transistor

The FDB20N50F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB20N50F transistor as follows.

FDB20N50F Transistor Specification

Transistor Code		FDB20N50F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.26Ohm
Power Dissipation (Maximum)	PD	250W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V

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