FDB20AN06A0 MOSFET Transistor

The FDB20AN06A0 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB20AN06A0 transistor as follows.

FDB20AN06A0 Transistor Specification

Transistor Code		FDB20AN06A0
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	90W
Drain-Source Capacitance		185pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		98nS
Gate-Threshold Voltage (Maximum)		4V

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