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FDB16AN08A0 MOSFET Transistor

The FDB16AN08A0 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB16AN08A0 transistor as follows.

Circuit diagram symbol of the FDB16AN08A0 transistor

FDB16AN08A0 Transistor Specification

Transistor Code FDB16AN08A0
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263_D2PAK
Drain-Source Voltage (Maximum) VDS 75V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 58A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.016Ohm
Power Dissipation (Maximum) PD 135W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 28nC

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