FDB14N30 MOSFET Transistor

The FDB14N30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB14N30 transistor as follows.

FDB14N30 Transistor Specification

Transistor Code		FDB14N30
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.29Ohm
Power Dissipation (Maximum)	PD	140W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		18nC

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