FDB14AN06LA0 MOSFET Transistor

The FDB14AN06LA0 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB14AN06LA0 transistor as follows.

FDB14AN06LA0 Transistor Specification

Transistor Code		FDB14AN06LA0
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	67A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.033Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		169nS
Gate-Threshold Voltage (Maximum)		3V

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