FDB12N50F MOSFET Transistor

The FDB12N50F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB12N50F transistor as follows.

FDB12N50F Transistor Specification

Transistor Code		FDB12N50F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.7Ohm
Power Dissipation (Maximum)	PD	165W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		21nC

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