FDB120N10 MOSFET Transistor

The FDB120N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB120N10 transistor as follows.

FDB120N10 Transistor Specification

Transistor Code		FDB120N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	74A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	170W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		66nC

UXPython is not the creator or an official representative of the FDB120N10 MOSFET transistor. You can download the official FDB120N10 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB34P10 MOSFET Transistor FDB38N30U MOSFET Transistor FDB12N50U MOSFET Transistor FDB3632_F085 MOSFET Transistor FDB86102LZ MOSFET Transistor FQB5N90 MOSFET Transistor FQB6N80 MOSFET Transistor FDB2552_F085 MOSFET Transistor FDB035AN06_F085 MOSFET Transistor FDB3502 MOSFET Transistor FDB20N50F MOSFET Transistor FDB3860 MOSFET Transistor FQB9N50C MOSFET Transistor FQB50N06L MOSFET Transistor FQB9P25 MOSFET Transistor FQB8P10 MOSFET Transistor FDB12N50TM MOSFET Transistor FDB8870_F085 MOSFET Transistor FDB33N25 MOSFET Transistor HUF76419S_F085 MOSFET Transistor